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CE TRANSISTOR AS AN AMPLIFIER. 9. TRANSISTOR AS A SWITCH. 10. DESIGN OF SELF BIAS CIRCUIT. 11. JFET DRAIN & TRANSFER CHARACTERISTICS (CS). The objective of this experiment is to be able to measure and graph the drain. characteristics curves for a junction field-effect transistor (JFET), measure the There are Source, Gate and Drain electrode sides. The Gate electrode voltage is used to control Drain-Source characteristics. In this lab, we are to obtain the Drain characteristics are obtained between the drain to source voltage (VDS) and drain current (ID) taking gate to source voltage (VGS) as the constant Under this condition the flow of charge is limited solely by resistance of the n channel between drain & source. It is important to note that the depletion To study and draw the characteristics of FET in common drain. configuration. 37-39. 15. To study VMOS Technology. 40-41. 6. LAB Electronics Laboratory. Experiment No.12. Field Effect Transistor (FET). OBJECT: To investigate the FET characteristics . APPARATUS: 1-D.C power supply .Drain characteristics are obtained between the drain to source voltage (VDS) and drain current (ID) taking gate to source voltage (VGS) as the constant The JFET gate and drain-source form a pn junction diode; a very simple model of the JFET is shown at right. In this model the source to drain resistance depends The circuit used to obtain the JFET characteristics is shown in Fig.3. To obtain the transfer characteristic, the drain supply voltage VDD should be maintained